| PART |
Description |
Maker |
| RN4962FE |
TOSHIBA Transistor Silicon NPN・PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5713 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
| 2SC5784 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5810 |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| MT4S06 |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT6L03AT |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2710-Y |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
|
Toshiba Semiconductor
|
| 2SC5748 |
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
|
TOSHIBA[Toshiba Semiconductor]
|
| RN1318 RN1314 RN1315 RN1316 RN1317 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Corporation
Toshiba Semiconductor
|
| RN1224 RN1223 RN1227 RN1221 RN1222 RN1225 RN1226 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN1011 RN1010 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
